Part Number | 2SC5130 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
Features |
X UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
0.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 1.5A; IB= 0.3A VCB= 500V; IE= 0
1.3
V
100 μA
IEBO
Emitter Cutoff ... |
Datasheet | 2SC5130 pdf datasheet |
Part Number | 2SC5130 |
Manufacturer | Sanken electric |
Title | NPN TRANSISTOR |
Description | 2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbo. |
Features |
V CE Characteristics (Typical)
800 mA
VCE(sat) –IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1.5 I C / I B =5 Const. I C – V BE Temperature Characteristics (Typical) (V C E =4V) 5 5 50 0m A Collector Current I C (A) 30 0m A 1.0 3 Collector Current I C . |
Datasheet | 2SC5130 pdf datasheet |
Part Number | 2SC5130 |
Manufacturer | SavantIC |
Title | SILICON POWER TRANSISTOR |
Description | ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 . |
Features |
Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=500V; IE=0 VEB=10V; IC=0 IC=1.5A ; VCE=4V IE=0; VCB=10V;f=1MHz IC=-0.3A ; VCE=12V 10 MIN 400
2SC5130
SYMBOL V(BR)CEO VCEsat VBEs. |
Datasheet | 2SC5130 pdf datasheet |
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