| Part Number | 2SD1137 |
| Manufacturer | Hitachi Semiconductor |
| Title | NPN TRANSISTOR |
| Description | 2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outli... |
| Features |
EO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio V(BR)EBO I CEO I EBO hFE
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 10
Area of Safe Operation (10 V, 4 A) Collector current IC (A) 3 1.0 0.3 0.1 (10... |
| Datasheet | 2SD1137 pdf datasheet |
| Part Number | 2SD1137 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SB860 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PI. |
| Features |
ut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=50mA; RBE=9 IE=1mA; IC=0 IC=1 A;IB=0.1 A VCE=80V; RBE=9 VEB=3.5V; IC=0 IC=0.5A ; VCE=4V IC=50mA ; VCE=4V 50 25 MIN 100 4 1.0 100 50 250 350 TYP. MAX UNIT V V V
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-. |
| Datasheet | 2SD1137 pdf datasheet |
| Part Number | 2SD1137 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB860 ·Minimum Lot-to-Lot vari. |
| Features |
mitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
ICEO
Collector Cutoff Current
VCE= 80V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 3.5V; IC= 0
hFE-1
DC Current Gain
IC= 500mA; VCE. |
| Datasheet | 2SD1137 pdf datasheet |
| Part Number | 2SD1137 |
| Manufacturer | Renesas |
| Title | Silicon NPN Transistor |
| Description | 2SD1137 Silicon NPN Triple Diffused ADE-208-907 (Z) 1st. Edition September 2000 Application Low frequency power amplifier TV vertical deflection o. |
| Features |
ector to emitter saturation VCE (sat) —
—
voltage
Note: 1. Pulse test.
Max Unit
—
V
—
V
100 µA
50
µA
250
350
1.0 V
Test conditions IC = 10 mA, RBE = ∞
IE = 1 mA, IC = 0
VCE = 80 V, RBE = ∞
VEB = 3.5 V, IC = 0
VCE = 4 V
IC = 0.5 A*1
IC = 50 mA
IC = 1 A, IB = 0.1 A
Collector pow. |
| Datasheet | 2SD1137 pdf datasheet |
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