| Part Number | 2SD1138 |
| Manufacturer | Hitachi Semiconductor |
| Title | NPN TRANSISTOR |
| Description | 2SD1138 Silicon NPN Triple Diffused ADE-208-908 (Z) 1st. Edition Sep. 2000 Application Low frequency high voltage power amplifier TV vertical defl... |
| Features |
mitter voltage
VBE
—
—
Collector output capacitance Cob
—
20
Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test.
Max Unit
—
V
—
V
1
µA
320
—
3.0 V
1.0 V
—
pF
Test conditions IC = 50 mA, RBE = ∞
IE = 5 mA, IC = 0
VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V... |
| Datasheet | 2SD1138 pdf datasheet |
| Part Number | 2SD1138 |
| Manufacturer | Renesas |
| Title | Silicon NPN Transistor |
| Description | 2SD1138 Silicon NPN Triple Diffused ADE-208-908 (Z) 1st. Edition September 2000 Application Low frequency high voltage power amplifier TV vertical. |
| Features |
—
Collector output capacitance Cob — 20
Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test.
Max Unit —V
—V
1 µA 320 — 3.0 V
1.0 V — pF
Test conditions IC = 50 mA, RBE = ∞
IE = 5 mA, IC = 0
VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*. |
| Datasheet | 2SD1138 pdf datasheet |
| Part Number | 2SD1138 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output PINNING . |
| Features |
Collector-emitter saturation voltage IC=0.5 A;IB=50m A
VBE Base-emitter voltage
IC=50mA ; VCE=4V
ICBO Collector cut-off current
VCB=120V; IE=0
hFE-1
DC current gain
IC=50mA ; VCE=4V
hFE-2
DC current gain
IC=0.5A ; VCE=10V
COB Output capacitance
IE=0 ;VCB=100V,f=1MHz
MIN TYP. MAX UNIT 1. |
| Datasheet | 2SD1138 pdf datasheet |
| Part Number | 2SD1138 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB861 ·Minimum Lot-to-Lot vari. |
| Features |
X UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
150
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.05A
3.0
V
VBE(on) Base-Emitter On Voltage
IC= 50mA ; VCE= 4V
1.0
V
ICBO
Collector Cutoff. |
| Datasheet | 2SD1138 pdf datasheet |
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