IPSH5N03LAG Datasheet

IPSH5N03LAG OptiMOS2 Power-Transistor

IPDH5N03LA G IPSH5N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature •.

Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 5.2 50 V mΩ A Type IPDH5N03LA IPSH5N03LA Package Marking P-TO252-3-11 H5N03LA P-TO251-3-11 H5N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanc.