| Part Number | MRF150 |
| Manufacturer | Motorola |
| Title | N-CHANNEL MOS LINEAR RF POWER FET |
| Description | ( DataSheet : www..com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF150/D The RF MOSFET Line RF Power Field-Ef... |
| Features |
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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R... |
| Datasheet | MRF150 pdf datasheet |
| Part Number | MRF150 |
| Manufacturer | MA-COM |
| Title | RF Power FET |
| Description | MRF150 RF Power FET 150W, to 150MHz, 50V Designed primarily for linear large-signal output stages up to 150 MHz • Superior high order IMD IMD(d3) . |
| Features |
rmation. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to prod. |
| Datasheet | MRF150 pdf datasheet |
| Part Number | MRF150 |
| Manufacturer | Tyco Electronics |
| Title | N-CHANNEL MOS LINEAR RF POWER FET |
| Description | ( DataSheet : www..com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF150/D The RF MOSFET Line RF Powe r Field-E ffec t T. |
| Features |
L CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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www.Da. |
| Datasheet | MRF150 pdf datasheet |
| Part Number | MRF150 |
| Manufacturer | Advanced Semiconductor |
| Title | SILICON RF POWER MOSFET |
| Description | The MRF150 is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 . |
| Features |
ICAL MAXIMUM
125 5.0 1.0 1.0 4 350 250 50 45 17.0 50 5.0
UNITS
V mA µA V mho
VDS = 50 V
VGS = 0 V
f = 1.0 MHz
pF
VDD = 50 V
IDQ = 250 mA
Pout = 150 W (PEP)
Fo = 30 & 30.001 MHz VSWR = 30:1 AT ALL PHASE ANGLES
dB %
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O . |
| Datasheet | MRF150 pdf datasheet |
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