K3430 Datasheet

K3430 2SK3430

The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: 5 5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Built-in gate protection diode (TO-220AB) 5 • Low Ciss.

Features

• Super low on-state resistance: 5 5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A)
• Built-in gate protection diode (TO-220AB) 5
• Low Ciss: Ciss = 2800 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 40 ±20 ±80 ±200 84 http://www.DataSheet4U.net/ V V A A W W °C °C A mJ (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 1.5 150 .