| Part Number | IXTA4N80P |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and c... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Unint... |
| Datasheet | IXTA4N80P pdf datasheet |
| Part Number | IXTA4N80P |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(o. |
| Features |
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 100μA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 5 150 3.4 V V nA μA μA Ω
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International st. |
| Datasheet | IXTA4N80P pdf datasheet |
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