BSB024N03LXG Datasheet

BSB024N03LXG Power MOSFET

BSB024N03LX G OptiMOSTM2 Power-MOSFET Features • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high sw.

Features

• Pb-free plating; RoHS compliant
• Dual sided cooling
• Low profile (<0.7 mm)
• 100% avalanche tested
• Qualified for consumer level application
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Optimized for high switching frequency DC/DC converter
• Low parasitic inductance Product Summary V DS R DS(on),max ID 30 2.4 145 V mΩ A MG-WDSON-2
• Compatible with DirectFET® package MX footprint and outline 1) Type BSB024N03LX G Package MG-WDSON-2 Outline MX Marking 0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain c.