BSC030P03NS3G Datasheet

BSC030P03NS3G Power Transistor

BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1) for target applications • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD > 4 kV • applications: battery management, load switching • Halogen-fre.

Features

• single P-Channel in SuperSO8
• Qualified according JEDEC 1) for target applications
• V GS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD > 4 kV
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 3.0 -100 PG-TDSON-8 V mΩ A Type Package Marking 030P3NS Lead free Yes Halogen free Yes Packing dry BSC030P03NS3 G PG-TDSON-8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C Pulsed .