| Part Number | MJ15015 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC = 4A,VCE= 4V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = ... |
| Features |
IT
Rth j-c Thermal Resistance,Junction to Case 0.98 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJ15015
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaini... |
| Datasheet | MJ15015 pdf datasheet |
| Part Number | MJ15015 |
| Manufacturer | ON |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designe. |
| Features |
• High Current−Gain − Bandwidth • Safe Operating Area • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO Vdc 60 120 Collector−Base Voltage 2N3055AG MJ15015G, MJ15016G VCBO Vdc . |
| Datasheet | MJ15015 pdf datasheet |
| Part Number | MJ15015 |
| Manufacturer | SavantIC |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-3 package ·Complement to type MJ15016 ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear . |
| Features |
e specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gai. |
| Datasheet | MJ15015 pdf datasheet |
| Part Number | MJ15015 |
| Manufacturer | Motorola |
| Title | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementa. |
| Features |
ÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ . |
| Datasheet | MJ15015 pdf datasheet |
| Part Number | MJ15015 |
| Manufacturer | NTE |
| Title | Silicon Complementary Transistors |
| Description | The MJ15015 (NPN) and MJ15016 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head po. |
| Features |
D High Safe Operating Area D High Current−Gain − Bandwidth
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Emitter Voltage Base, VCEV . . . . . . . . . . . . . . . .. |
| Datasheet | MJ15015 pdf datasheet |
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