Part Number | BSS225 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Title | Small-Signal-Transistor |
Description | Type SIPMOS® Small-Signal-Transistor Feature • n-channel • enhancement mode • Logic level • dv /dt rated • Qualified according to AEC Q101 • Halog... |
Features |
• n-channel • enhancement mode • Logic level • dv /dt rated • Qualified according to AEC Q101 • Halogenfree according to IEC61249221 Product Summary V DS 1) R DS(on),max ID BSS225 600 V 45 Ω 0.09 A SOT89 Type BSS225 Package SOT89 Pb-free Yes Tape and Reel Information H6327: 3000PCS/reel M... |
Datasheet | BSS225 pdf datasheet |
Part Number | BSS229 |
Manufacturer | Siemens Semiconductor |
Title | SIPMOS Small-Signal Transistor |
Description | SIPMOS® Small-Signal Transistor BSS 229 q q q q q q q VDS 250 V ID 0.07 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Availa. |
Features |
unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 250 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Dr. |
Datasheet | BSS229 pdf datasheet |
Part Number | BSS229 |
Manufacturer | Siemens Semiconductor Group |
Title | SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
Description | SIPMOS® Small-Signal Transistor BSS 229 q q q q q q q VDS 250 V ID 0.07 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Availa. |
Features |
unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 250 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Dr. |
Datasheet | BSS229 pdf datasheet |
Part Number | BSS223PW |
Manufacturer | INFINEON |
Title | OptiMOS -P Small-Signal-Transistor |
Description | BSS 223PW OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperatu. |
Features |
• P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 1.2 -0.39 V Ω A PG-SOT-323 3 • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type BSS 223PW Package PG. |
Datasheet | BSS223PW pdf datasheet |
Part Number | BSS223PW |
Manufacturer | Infineon Technologies AG |
Title | OptiMOS -P Small-Signal-Transistor |
Description | BSS 223PW OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperatu. |
Features |
• P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 1.2 -0.39 V Ω A PG-SOT-323 3 • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type BSS 223PW Package PG. |
Datasheet | BSS223PW pdf datasheet |
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