ME20N10-G Datasheet

ME20N10-G N-Channel 100V (D-S) MOSFET

The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

Features

● RDS(ON)≦78mΩ@VGS=10V
● RDS(ON)≦98mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter (TO-252-3L) Top View e Ordering Information: ME20N10 (Pb-free) ME20N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation* TC=25℃ TC=70℃ Operating.