MMBT2222A

NPN EPITAXIAL SILICON TRANSISTOR MMBT2222/ALT1 GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc(max)=225mW Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating 2222 2222A Collector-Base Voltage Vcbo 60 75 Collector-Emitter Voltage Vceo 30 40 Emitter-Base Voltage Vebo 5 6 Collector Current Ic 600 Collector Dissipation Ta=25* PD 225 Junction Temperature Tj 150 Storage Temperature Tstg -55-150 Unit V V V mA mW PIN: STYLE NO 1 123 BEC ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Max Unit Test Conditions Collector-Base Breakdown Voltage MMBT2222 MMBT2222A BVcbo 60 75 V Ic= 10uA Ie=0 Collector-Emitter Breakdown Voltage MMBT2222 MMBT2222A BVceo 30 40 V Ic= 10mA Ib=0 Emitter-Base Breakdown Voltage MMBT2222 MMBT2222A BVebo 5 6 V Ie= 10uA Ic=0 Emitter Cutoff Current MMBT2222A Icex 10 nA Vce=60V Veb=3V Collect Cutoff Current MMBT2222 MMBT2222A Icbo Vcb= 50V Ie=0 10 nA ...