DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D883
PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor
Product...
DISCRETE SEMICONDUCTORS
DATA SHEET
BOTTOM VIEW
M3D883
PBSS2515M 15 V, 0.5 A
NPN low VCEsat (BISS)
transistor
Product data sheet Supersedes data of 2003 Jun 17
2003 Sep 15
NXP Semiconductors
15 V, 0.5 A
NPN low VCEsat (BISS)
transistor
Product data sheet
PBSS2515M
FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to reduced heat generation Reduced printed-circuit board requirements.
APPLICATIONS Power management:
– DC-DC converter – Supply line switching – Battery charger – LCD backlighting. Peripheral driver: – Driver in low supply voltage applications (e.g. lamps
and LEDs) – Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
Low VCEsat
NPN transistor in a SOT883 leadless ultra small plastic package.
PNP complement: PBSS3515M.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICM RCEsat
collector-emitter voltage collector current (DC) peak collecto...
