ERS411DS

ERS411DS Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES ‧Small surface mounting type ‧Low reverse current and low forward voltage ‧High reliability ‧Pb-Free package is available ‧RoHS product for packing code suffix "G" ‧Halogen free product for packing code suffix "H" ‧Moisture Sensitivity Level 1 MARKING: D3E Revision: B01 www.eris.com.tw ERS411DS Maximum Ratings (Ta=25°C unless otherwise specified) Parameter Peak Repetitive Reverse Voltage RMS Reverse Voltage DC Reverse Voltage Peak Forward Current Mean Rectifying Current Power Dissipation Thermal Resistance Junction to Ambient Operating Temperature Storage Temperature Plastic-Encapsulate Diodes Symbol VRM VR(RMS) VR IFSM IO PD RθJA TJ TSTG Limit 40 28 20 3 0.5 200 500 -55~+125 -55~+150 Unit V V V A A mW °C/W °C °C Electrical Characteristics (Ta=25°C unless otherwise specified) Parameter Symbol Test conditions Reverse Breakdown Voltage VR IR= 100μA Forward Voltage VF1 IF= 10mA VF2 IF= ...