MPS8550SC Datasheet

MPS8550SC EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8050SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO.

Features

rent Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V(BR)EBO ICBO IEBO hFE (Note) VCE(sat) VBE(sat) Transition Frequency Note) : hFE Classification D:150~300 fT TEST CONDITION IC=-0.1mA, IE=0 IC=-1mA, IB=0 IE=-0.1mA, IC=0 VCB=-35V, IE=0 VEB=-4V, IC=0 VCE=-1V, IC=-100mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-6V, IC=-20mA, f=30MHz MIN. -40 -25 -5 150 150 TYP. - MAX. - -0.1 0.1 300 -0.5 -1.2 - UNIT V V V uA uA V V MHz 2015. 9. 30 Revision No : 1 1/2 MPS8550SC 2015. 9. 30 Revision No : 1 2/2 .