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IRF3205


Part Number IRF3205
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205, IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhanceme...
Features
·Static drain-source on-resistance: RDS(on) ≤8.0mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=...

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IRF320 : .

IRF320 : These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Features • 2.8A and 3.3A, 350V and 400V • rDS(ON) = 1.8Ω and 2.5Ω • Single Pulse Avalanche Energy Rated • SOA is .

IRF320 : .

IRF320 : ·Drain Current ID=3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 400 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3.3 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc web.

IRF320 : These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Features • 2.8A and 3.3A, 350V and 400V • rDS(ON) = 1.8Ω and 2.5Ω • Single Pulse Avalanche Energy Rated • SOA is .

IRF3205 : The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current .

IRF3205 : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°.

IRF3205 : The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. D D G G D S TO-220AB (IRF3205A) D S FEATURES RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF3205H) D.

IRF3205A : The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. D D G G D S TO-220AB (IRF3205A) D S FEATURES RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF3205H) D.

IRF3205H : The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. D D G G D S TO-220AB (IRF3205A) D S FEATURES RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF3205H) D.

IRF3205L : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection res.

IRF3205LPBF : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection res.

IRF3205PBF : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25.

IRF3205S : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection res.

IRF3205S : ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 110 A IDM Pulse Drain Current 390 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,.

IRF3205SPBF : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection res.




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