SSPL2090 Datasheet

SSPL2090 N-Channel enhancement mode power field effect transistors

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

Features

 Advanced MOSFET process technology
 Special designed for PWM, load switching and general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature SSPL2090 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalan.