Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive .
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design .
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | AUIRFR4620 |
International Rectifier |
Power MOSFET | |
2 | AUIRFR4615 |
International Rectifier |
Power MOSFET | |
3 | AUIRFR4104 |
International Rectifier |
Power MOSFET | |
4 | AUIRFR4105 |
International Rectifier |
Power MOSFET | |
5 | AUIRFR4105Z |
Infineon |
Power MOSFET |