SMD Type N-Channel Enhancement MOSFET SI2302DS (KI2302DS) ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 G1 S2 3D +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: m.
● VDS=20V
● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A
● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
G1 S2
3D
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
MOSFET
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
*1
Ta=25℃ Ta=70℃
Pulsed Drain Current
Power Dissipation
Ta=25℃ Ta=70℃
Thermal Resistance.Junction- to-Ambient *1
*2
Junction Temperature
Storage Temperature Range
Notes: *1.Surface .
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