ME1304AT3 Datasheet

ME1304AT3 N-Channel 20V (D-S) MOSFET

The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

Features

● RDS(ON) ≦ 65 mΩ @VGS=4.5V
● RDS(ON) ≦ 80 mΩ @VGS=2.5V
● RDS(ON) ≦ 95 mΩ @VGS=1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Load Switch
● DSC Ordering Information: ME1304AT3 (Pb-free) ME1304AT3-G.