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BC547


Part Number BC547
Manufacturer NXP
Title NPN Transistor
Description NPN general-purpose transistors in small plastic packages. Table 1. Product overview Type number[1] Package NXP BC847 SOT23 BC847A BC847B ...
Features I Low current I Low voltage I Three different gain selections 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter Conditions collector-emitter voltage open base collector current DC current gain hF...

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BC546 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC546/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC546, B BC547, A, B, C BC548, A, B, C 2 BASE 3 EMITTER MAXIMUM RATINGS Rating BC BC BC Symbol 546 547 548 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 65 45 30 Vdc 80 50 30 Vdc 6.0 Vdc 100 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit .

BC546 : NPN Epitaxial Silicon Transistor BC546 / BC547 / BC548 / BC549 / BC550 Features • Switching and Amplifier • High−Voltage: BC546, VCEO = 65 V • Low−Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector−Base Voltage BC546 BC547 / BC550 BC548 / BC549 VCBO V 80 50 30 Collector−Emitter Voltage BC546 BC547 / BC550 BC548 / BC549 VCEO V 65 45 30 Emitter−Base Voltage BC546 / BC547 VEBO BC548 / BC549 / BC550 V 6 5 Collector Current (DC) IC 100 mA Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to +150 °C S.

BC546 : NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. PINNING PIN 1 2 3 emitter base collector DESCRIPTION handbook, halfpage1 2 3 2 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. 3 1 ORDERING INFORMATION TYPE NUMBER BC546A BC546B BC547 BC547B BC547C NAME SC-43A PACKAGE DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 2004 Nov 25 2 Philips Semiconductors NPN general purpose transistors Product specification BC546; BC547 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCBO collector-base voltage BC546A; BC546B BC547 VCEO collector-emitter vo.

BC546 : BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor April 2014 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BTF BC546CTA BC547ATA BC547B BC547BBU BC547BTA BC547BTF BC547CBU BC547CTA BC547CTFR BC548BU BC548BTA BC548CTA BC549BTA BC549BTF BC549CTA BC550CBU BC550CTA Marking BC546A BC546A BC546B BC546B BC546C BC547A BC547B BC547B BC547B BC547B BC547C BC547C BC547C BC548 BC548B BC548C BC549B BC5.

BC546 : FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC546···BC550 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings(Ta=25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549 Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOLS VCBO VCEO VEBO IC ICM Ptot Tj Tstg Value 80 50 30 65 45 30 6 100 200 500 150 -65 to +150 UNITS V V V mA mA mW ℃ ℃ Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 703.

BC546 : The CENTRAL SEMICONDUCTOR BC546, BC547, BC548 series devices are silicon NPN small signal transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM IBM IEM PD TJ, Tstg ΘJA ΘJC BC546 80 80 65 6.0 BC547 50 50 45 6.0 100 200 200 200 500 -65 to +150 250 15.

BC546 : NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. PINNING PIN 1 2 3 emitter base collector DESCRIPTION handbook, halfpage1 2 3 2 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. 3 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCBO collector-base voltage BC546 BC547 VCEO collector-emitter voltage BC546 BC547 VEBO emitter-base voltage BC546 BC547 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage te.

BC546 : Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM IEM IBM Ptot Tstg Tj BC546 80 80 65 6 Thermal Resistance From junction to ambient Rth(j-a) BC547 50 50 45 6 100 200 200 200 500 -55 to +150 150 250 BC548 30 30 30 5 UNITS V V V V mA mA mA mW oC oC oC/W www.rectron.com 1 of 3 BC546 BC547 BC548 Electrical Characteristics (Ta=25 oC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage BC.

BC546 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage BC546 BC547 BC548 Collector-Emitter Voltage BC546 BC547 BC548 Emitter-Base Voltage BC546 BC547 BC548 BC546 Collector Current BC547 BC548 BC546 Emitter Current BC547 BC548 Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 80 50 30 65 45 30 6 6 5 100 100 100 -100 -100 -100 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K .

BC546 : UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * High Voltage: UTC BC546, VCEO=65V UTC BC547, VCEO=45V UTC BC548, VCEO=30V 1 TO-92  ORDERING INFORMATION Order Number Lead Free Halogen Free BC546L-x-T92-B BC546G-x-T92-B BC546L-x-T92-K BC546G-x-T92-K BC547L-x-T92-B BC547G-x-T92-B BC547L-x-T92-K BC547G-x-T92-K BC548L-x-T92-B BC548G-x-T92-B BC548L-x-T92-K BC548G-x-T92-K Note: Pin Assignment: C: Collector B: Base E: Emitter Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 123 CBE CBE CBE CBE CBE CBE BC546L-x-T92-B (1)Packing Type (2)Package Type (3)Rank (4)Halogen Free (1) B: Tape .

BC546A : NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BC846 SOT23 BC846W SOT323 BC846T SOT416 BC546A[2] SOT54 BC546B[2] SOT54 JEITA SC-70 SC-75 SC-43A SC-43A JEDEC TO-236AB TO-92 TO-92 PNP complement BC856 BC856W BC856T BC556A BC556B [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features „ General-purpose transistors „ SMD plastic packages „ Two different gain selections 1.3 Applications „ General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter.

BC546A : FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC546···BC550 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings(Ta=25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549 Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOLS VCBO VCEO VEBO IC ICM Ptot Tj Tstg Value 80 50 30 65 45 30 6 100 200 500 150 -65 to +150 UNITS V V V mA mA mW ℃ ℃ Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 703.

BC546A : Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM IEM IBM Ptot Tstg Tj BC546 80 80 65 6 Thermal Resistance From junction to ambient Rth(j-a) BC547 50 50 45 6 100 200 200 200 500 -55 to +150 150 250 BC548 30 30 30 5 UNITS V V V V mA mA mA mW oC oC oC/W www.rectron.com 1 of 3 BC546 BC547 BC548 Electrical Characteristics (Ta=25 oC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage BC.

BC546A : BC546 ... BC549 BC546 ... BC549 General Purpose NPN Transistors Universal-NPN-Transistoren IC = 100 mA hFE ~ 110/200/420 Tjmax = 150°C VCEO = 30...65 V Ptot = 500 mW Version 2018-02-01 16 9 18 TO-92 (10D3) CBE 2 x 2.54 Typical Applications Signal processing, (1) Switching, Amplification Commercial grade 1) Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb ELV Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanische Daten 1) 4.6±0.1 (1) Taped in am.

BC546A : The CENTRAL SEMICONDUCTOR BC546, BC547, BC548 series devices are silicon NPN small signal transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM IBM IEM PD TJ, Tstg ΘJA ΘJC BC546 80 80 65 6.0 BC547 50 50 45 6.0 100 200 200 200 500 -65 to +150 250 15.

BC546A : BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA • Case: TO-92 • Terminals: Solderable per MIL-STD-202, Method 208 • Approx Weight : 0.02grams • Device Marking : BC546A=546A BC547A=547A BC548A=548A BC546B=546B BC547B=547B BC548B=548B BC547C=547C BC548C=548C ABSOLUTE MAXIMUM RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Max Power Dissi.

BC546A : Green compound Document Number: DS_S1405001 Version: B14 Small Signal Product DIMENSIONS TO-92 Bulk TO-92 Ammo A B C E D SUGGEST PAD LAYOUT I G H BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor DIM. A B C D E F G H I Unit (mm) Min 4.40 Max 5.10 4.30 4.70 12.50 14.50 1.17 1.37 0.35 0.55 1.17 1.37 0.59 1.40 0.29 0.51 3.300 4.100 Unit (inch) Min Max 0.173 0.201 0.169 0.185 0.492 - 0.046 0.054 0.014 0.022 0.046 0.054 0.023 0.055 0.011 0.020 0.130 0.161 DIM. A B C D E G H I Unit (mm) Min 4.30 Max 4.70 4.30 4.70 12.50 - 2.20 2.80 0.35 0.55 1.00 1.20 0.29 0.51 3.30 3.70 Unit (inch) Min Max 0.169 0.185 0.169 0.185 0.492 - 0.087 0.110 0.014 0.022 0.039 0..




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