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PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCW67, BCW68 3 2 1 Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H Mark.
S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCW67 IC = 10 mA, IB = 0 , BCW68 V(BR)CEO 32 - - 45 - - Collector-base breakdown voltage IC = 10 µA, IE = 0 , BCW67 IC = 10 µA, IE = 0 , BCW68 V(BR)CBO 45 - - 60 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO .
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