MB81C74 Datasheet (PDF), Stock and Price, Fujitsu SRAM, Distributor

MB81C74 CMOS 64K-BIT HIGH-SPEED SRAM

March 1990 Edition 3.0 DATA SHEET MBS1 C74-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM cP FUJITSU 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujnsu MB81C74 is a 16,384 words x 4 bns static random access memory fabricated wnh a CMOS silicon gate process. The memory uses asyn.

Features

olerance
• low power standby: 550 mW max. (Active) 55 mW max. (Standby, CMOS level) 110 mW max. (Standby, TIL level)
• Standard 22-pin Plastic Package: DIP MB81C74-xxP
• Standard 22-pad Ceramic Package: lCC (metal seal) MB81C74-xxCV Absolute Maximum Ratings (See Note) Rating Supply Voltage Input Volt~e on any pin wnh respect to ND Symbol Value Un" Vee -

No.	Part #	Manufacture	Description
1	MB81C71A	Fujitsu	CMOS 64K-Bit High Speed SRAM
2	MB81C75	Fujitsu	CMOS 64K-BIT HIGH-SPEED SRAM
3	MB81C78A	Fujitsu	CMOS 64K-Bit High Speed SRAM
4	MB81C79A	Fujitsu	CMOS 72K-Bit High Speed SRAM
5	MB81C79B	Fujitsu	CMOS 72K-BIT HIGH-SPEED SRAM