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A19T


Part Number A19T
Manufacturer Rectron
Title P-Channel Enhancement Mode Power MOSFET
Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev...
Features VDS = -30V,ID = -4.2A RDS(ON) 130mΩ @ VGS=-2.5V RDS(ON) 75mΩ @ VGS=-4.5V RDS(ON) 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power management ƽP /N suffix V means AEC-Q101 qualified, e.g...

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A19-1 : A19-1/SMA19-1 10 TO 1000 MHz CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22.5 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation Noise Figure (max.) Power Output @ 1 dB comp. (min.) IP3 IP2 Second Order Harmonic IP VSWR Input / Output (max.) DC Current @ 15 Volts (max.) Typical 0° to 50°C Guaranteed -54° to +85°C 0.0-1.1 GHz 11.5 dB ±0.2 dB 16 dB 5.5 dB 22.5 dBm +35 dBm +51 dBm +58 dBm 1.5:1 / 1.5:1 90 mA 0.0-1.0 GHz 10.5 dB ±0.6 dB 6.5 dB 20.5 dBm 0.0-1.0 GHz 10.0 dB ±0.8 dB 7.0 dB 20.0 dBm 1.7:1 / .

A19-1 : The A19-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperaturestable performance, in addition to an RF Choke, used for power supply decoupling. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available. Ordering Information Part Number A19-1 Package TO-8 SMA19-1 CA19-1 Surface Mount SMA Connectorized ** ** The connectorized version is not RoHs .

A190-3A-00 : Free Datasheet http://www.datasheet4u.com/ .

A1907 : ·With TO-3PML package ·Complement to type 2SC5099 APPLICATIONS ·Audio and general purpose PINNING PIN DE 1 2 3 Emitter Collector Base Fig.1 s implified o utline ( TO-3PML) a nd s ymbol SCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL P VCBO VCEO VEBO IC IB PC Tj Tstg ARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -6 -3 60 150 -55~150 UNIT V V V A A W 1 http://www.Datasheet4U.com SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTI.

A1908 : 2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol 2SA1908 Unit VCBO –120 V VCEO –120 V VEBO –6 V IC –8 A IB –3 A PC 75(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions 2SA1908 Unit ICBO VCB=–120V –10max µA IEBO VEB=–6V –10max µA V(BR)CEO IC=–50mA –120min V hFE VCE=–4V, IC=–3A 50min∗ VCE(sat) IC=–3A, IB=–0.3A –0.5max V fT VCE=–12V, IE=0.5A 20typ MHz COB VCB=–10V, f=1MHz 300typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) .

A1909 : ·With TO-3PML package ·Complement to type 2SC5101 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Product Specification 2SA1909 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -140 -140 -6 -10 -4 80 150 -55~150 UNIT V V V A A W 1 SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com Product Specification 2SA1.

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