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D718


Part Number D718
Manufacturer SavantIC
Title Silicon NPN Power Transistors
Description ·With TO-3P(I) package ·Complement to type 2SB688 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier outp...
Features ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz MIN TYP. MAX...

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D716 : SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose www.DataSheet4U.com QUICK REFERENCE DATA SYMBOL TO-3P(I)D CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 3.0A; IB = 0.3A IF = 3.0A 1.5 MAX 100 100 6 60 2 2.0 - UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage.

D717 : Silicon Epitaxial Planar Transistor Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL PARAMETER Collector-emitter voltage peak value VCBO Collector-emitter voltage (open base) VCEO Collector current (DC) IC www.DataSheet4U.com Collector current peak value ICM Total power dissipation Ptot Collector-emitter saturation voltage VCEsat Diode forward voltage VF Fall time tf CONDITIONS VBE = 0V TO-3P(I)D TYP MAX 70 70 10 80 2 2.0 1.0UNIT V V A A W V V s Tmb 25 IC = 4.0A; IB=0.4A IF = 3.5A IC=4A,IB1=-IB2=0.4A,VCC=30V 1.5 0.4 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER C.

D718 : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-003.C .

D71F2T1 : SURFACE-MOUNT PNP POWER TRANSISTORS D71F2T1 -50 VOLTS -2 AMP, 500mWATTS Designed for power amplifier applications, power switching applications. Features: • Low saturation voltage : VCE(sat) = -O.SV (Max.) (IC = -1A) • High speed switching time: tstg = 1.0fJ.s (Typ.) • PD=1 ~ 2W (Mounted on ceramic substrate) • Small flat package • Complementary to D70F2T1 • See page 840 for mounting and handling considerations. MARKING SYSTEM ~N1 TYPENAME hFE DESIGNATION hFE DESIGNATION 1) 70-240 2) 70-140 3) 120-240 PNP COLLECTOR CASE STYLE SOT-89 EMITTER DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .IBl (4.6 MAX.) a.l.~, e" .016 - .002 +.003 (0.4 -0.05) ('O.OB) .~,5~; ~~ ---;+---t-~- ~,~;; ~~~ =maximum .

D71G.05T1 : SURFACE-MOUNT PNP POWER TRANSISTORS D71G.05T1 -150 VOLTS -50 mAMP, 500 mWATTS Designed for high voltage switching applications. F~atures: • High voltage: VCEO = -150V • High transition frequency: fT = 120MHz • PD=1 ~ 2W (Mounted on ceramic substrate) • Small flat package • Complementary to D70G.05T1 • See page 840 for mounting and handling considerations. WB1fMARKING SYSTEM TYPENAME hFE DESIGNATION hFE DESIGNAnON 1) 70·240 2) 70·140 3) 120·240 PNP COLLECTOR CASE STYLE SOT-89 EMITTER DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .181 14.6MAxT a.l.~, 9. .Q16· .002 +.003 (0.4 ·0.05) (.0.08) .059 ± .004 _ot+--+-o--Oo/+-_.059 ± .004 (1.5±0.1) (1.5±0.1) =maximum ratings (TA 25° C) (unless ot.

D71Y.8T1 : SURFACE-MOUNT D71Y.8T1 PNP POWER TRANSISTORS -30 VOLTS -800 mAMP, 500 mWATTS Designed for audio frequency amplifier applications. Features: • High DC current gain: hFE = 100 - 320 • Suitable for output stage of 1-Watt amplifier • PD=1 - 2W (Mounted on ceramic substrate) • Small flat package • Complementary to D70Y.8T1 • See page 840 for mounting and handling considerations. MARKING SYSTEM ~R1 TYPENAME hFE DESIGNATION hFE DESIGNATION 1) 70·240 2) 70-140 3) 120-240 PNP COLLECTOR CASE STYLE SOT-89 EMITTER DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .181 (4.6 MAX.) =maximum ratings (TA 25 0 C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Base Voltage Emitter Bas.

D71Y1.5T1 : SURFACE-MOUNT D71Y1.5T1 PNP POWER TRANSISTORS -30 VOLTS -1.5mAMP,500mWATTS Oesigned for audio frequency amplifier applications. Features: • Suitable for output stage of 3 watt amplifier • PO=1 ~ 2W (Mounted on ceramic substrate) • Small flat package • Complementary to D70Y1.5T1 • See page 840 for mounting and handling considerations. PNP COLLECTOR CASE STYLE SOT-89 EMITTER DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .181 (4.6 MAX.) @H1MARKING SYSTEM TYPENAME hFE DESIGNATION hFE DESIGNATION 1170-240 2) 70-140 3) 120-240 .016· .002 +.003 (0.4 -0.05) (+0.08) .~~:! o~~: -+-"-i--+-- .~~~ ; o~~ maximum ratings (TA = 250 C) (unless otherwise specified) RATING Collector-Emitter Voltage Coll.




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