IPB65R110CFD Datasheet

IPB65R110CFD N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching app.

Features

·With TO-263(D2PAK) packaging
·Ultra-fast body diode
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operationz
·APPLICATIONS
·Switching applications INCHANGE Semiconductor IPB65R110CFD
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 31.2 19.7 99.6 PD Total Dissipation 277.8 Tj Operating Junction Temperature -55~150 Tst.