BDY72 Datasheet

BDY72 NPN Transistor

·Contunuous Collector Current-IC= 3A ·Collector Power Dissipation- : PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose switching and line.

Features

mi.com MAX UNIT 7.0 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 140V; IB= 0 VCE= 130V; VBE(off)= 1.5V VCE= 130V; VBE(off)= 1.5V, TC=150℃ VEB= 7V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= .