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·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type D44H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power amplification and switching such as output .
w.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor D45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-EmitterSaturation Voltage IC= -8A ;IB= -0.4 A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8 A -1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; VBE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -2A ; VCE= -1V 60 hFE-2 DC Current Gain IC= -4A ; VCE= -1V 40 COB .
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