Part Number 20N60C3
Manufacturer Infineon
Title Power Transistor
Features QGVWRUDJHWHPSHUDWXUH Reverse diode dv/dt 7) 6\PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$               “ “ ± ±    15 8QLW $ $ P- $ 9 : ƒ& V/ns Rev. 3.2 Page 1 2018-02-12 633...

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20N60C2 : Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 V Ω A 0.19 20 avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances 1 P-TO220-3-31 2 3 Type SPP20N60C2 SPB20N60C2 SPA20N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4320 Q67040-S4322 Marking 20N60C2 20N60C2 20N60C2 P-TO220-3-31 Q67040-S4333 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 20 13.

20N60C3 : Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA4917.

20N60C5 : IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.2 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 6.6 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V 20 A 13 A 435 mJ 0.66 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 10 A VDS = VGS; ID = 1.1 mA VDS .

20N60CFD : 0MMJ!57;W 8MTCO!O?LPGPQMO 3C?QROC )%GXi!dXhb_gf\baTdk![\Z[!hb_fTZX!fXV[ab_bZk )!Pbd_Wi\WX!UXef!.=L#ba$!\a!MH!--+ )!N_fdT!_bi!ZTfX!V[TdZX )%IXd\bW\V!ThT_TaV[X!dTfXW )!jfdX`X!W*W; dTfXW )%A\Z[!cXT^!VgddXaf!VTcTU\_\fk )%Bafd\ae\V!YTef(dXVbhXdk!UbWk!W\bWX )!jfdX`X!_bi!dXhXdeX!dXVbhXdk!V[TdZX ;88'%6+%031 0=L!&!/]`Tj .=L#ba$ += 10+ +)--+)2 O ! 9 I@(MH--+ VNC 8?AI?EC LII-+G1+?= I@(MH--+ 7OBCOGLE!0MBC J12+/+(L/1,1 5?OIGLE -+G1+?= 5?UGKRK!9?QGLEP 8?O?KCQCO ;VK@MJ baf\agbge!WdT\a!VgddXaf! / !7!-0!o! / !7!,++!o += Ig_eXW!WdT\a!VgddXaf'!;c!_\`\fXW!Uk!/ ]`Tj 9hT_TaV[X!XaXdZk'!e\aZ_X!cg_eX! +=!7!,+!9'!0 ==!7!0+!O 9hT_TaV[X!XaXdZk'!dXcXf\f\hX!;9K!_\`\fXW!Uk!/ ,$ ]`Tj +=!7!-+.

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