2SK2110 Datasheet

2SK2110 N-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2110 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2110 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching.

Features

• Low ON resistance RDS(on) = 1.5 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
• High switching speed ton + toff < 100 ns
• Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03
  –0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Marking: NT ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIO.