2SD1062 Datasheet

2SD1062 PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–.

Features

· Low-saturation collector-to-emitter voltage : VCE(sat)=
  –0.5V (PNP), 0.4V (NPN) max.
· Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector .