SHF-0289 Datasheet

SHF-0289 1.0 Watt GaAs HFET

Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB.

Features

• Patented GaAs Heterostructure FET Technology
• +30dBm Output Power at 1dB Compression
• +46dBm Output IP3
• High Drain Efficiency: Up to 40% at Class AB
• 13 dB Gain at 900MHz (Application circuit)
• 13 dB Gain at 1900MHz (Application circuit) Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers GMax(dB) 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Frequency (GHz) Electrical Specifications at Ta = 25o C Symbol Parameters: Test Conditions 2 Units Min. Typ. Max. |S21| Insertion Power Gain Vds = 8.0V, I dq= 250mA, ZS=ZL=50 Ohms Maximum Available Gai.