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C1815


Part Number C1815
Manufacturer Toshiba Semiconductor
Title Silicon NPN Transistor
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier ...
Features nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing th...

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C1812 : NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1100MHz 2SC1812 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 Unit:mm ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25 oC* Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating 30 15 5 50 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW OC OC Electrical Characteristics (Ta=25 oC) Parameter Symbol MIN. TYP. MAX. Unit Condition Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# Emi.

C1812Cxxxx : CERAMIC CHIP CAPACITORS FEATURES • C0G (NP0), X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and +80%-20% • Tape and reel packaging per EIA481-1. (See page 92 for specific tape and reel information.) Bulk Cassette packaging (0402, 0603, 0805 only) per IEC60286-6 and EIAJ 7201. • RoHS Compliant CAPACITOR OUTLINE DRAWINGS W T S ELECTRODES L B TIN PLATE NICKEL PLATE CONDUCTIVE METALLIZATION DIMENSIONS—MILLIMETERS AND (INCHES) EIA SIZE CODE 0402* www.DataSheet4U.com METRIC SIZE CODE (Ref only) 1005 1608 2012 3216 3225 .

C1812Fxxxx : www.DataSheet4U.com CERAMIC OPEN MODE CAPACITORS FEATURES KEMET’s Open Mode Ceramic Surface Mount Capacitor is designed to significantly minimize the probability of a low IR or Short Circuit Condition when forced to failure in a board flex situation. This reduces the potential for causing catastrophic failures. This product is RoHS Compliant. Applications: • Input side filtering (power plane/bus) • High current applications (battery line) • Circuits that cannot be fused to open when short circuits occur due to flex cracks Markets: • Automotive - All applications connected directly to the battery - Conversion to 42V power system • Power Conversion - Raw power input side filtering OUTLINE D.

C1815 : KSC1815 KSC1815 Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage : VCBO= 50V 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 50 400 125 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob NF Col.

C1815 : www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -60 -50 -5 150 200 -55-150 Units V V V mA mW ℃ TRANSISTOR (NPN) TO—92 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Collector-base breakdown voltage.

C1815 : Elektronische Bauelemente C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor FEATURE Power Dissipation MARKING: HF RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation VCBO VCEO VEBO IC Pc 60 50 5 150 200 Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.0.

C1815-G : General Purpose Transistors COMCHIP SMD Diodes Specialist C1815-G (NPN) RoHS Device Features -Power dissipation P CM =0.2W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Marking: HF Collector 3 0.044(1.10) 0.035(0.90) 1 0.083(2.10) 0.066(1.70) 2 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 1 Base 0.020(0.50) 0.013(0.35) 0.006(0.15) max 0.007(0.20) min 2 Emitter O Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25 C unless otherwise noted) Parameter Collector-Base voltage www.DataSheet4U.com Symbol V CBO V CEO V EBO IC PD T J ,T STG O Value -60 -50 -5 150 200 -55 to +150 Unit V V V mA mW O Collector-Emitter voltage Emitter-Base voltage Collector curre.

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C1815LT1 : www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ otherwise specified£© Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) TRANSISTOR£¨NPN.

C1815T : Elektronische Bauelemente C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  Power Dissipation CLASSIFICATION OF hFE (1) Product-Rank C1815T-O C1815T-Y Range 70~140 120~240 C1815T-GR 200~400 TO-92 GH J AD B K E CF Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage C.

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