RFP22N10 Datasheet

RFP22N10 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs

RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of s.

Features

• 22A, 100V
• rDS(ON) = 0.080Ω
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP22N10 RF1S22N10SM PACKAGE TO-220AB TO-263AB BRAND RFP22N10 F1S22N10 Symbol D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A. G S Packaging JEDEC TO-220AB SO.