MGF1801BT Datasheet

MGF1801BT High-power GaAs FET

The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in th.

Features

 High linear power gain Glp=9.0dB @f=8GHz
 High P1dB P1dB=23dBm(TYP.) @f=8GHz
 High reliability and stability APPLICATION
 S to X Band medium-power amplifiers and oscillators QUALITY
 IG RECOMMENDED BIAS CONDITION
 VDS=6V,Id=100mA Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Gate to source breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature -8 -8 250 -0.6 1.5 1.2 175 -65.