STS4DPF30L Datasheet

STS4DPF30L Dual P-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufactur.

Features

on Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 30 30 ± 16 4 2.5 16 2.0 1.6 Unit V V V A A A W W (
•) Pulse width limited by safe operating area. April 2002 Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/6 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STS4DPF30L THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operating Junction-ambient Storage Temp.