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IRFP260N


Part Number IRFP260N
Manufacturer International Rectifier
Title Power MOSFET
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon are...
Features 5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recove...

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IRFP260 : www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 200 ±20 ±30 46 184 46 V V V V A A A mJ V/ns W °C °C °C TO-247 AD Continuous Transient TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C D (TAB) 28 5 280 -55 ... +150 150 -55 ... +150 G = Gate, S = Source, D = Drain, TAB = Drain ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, IS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C Features • International standard package JEDEC .

IRFP260 : Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247AC IRFP260PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage.

IRFP260 : .

IRFP260 : iscN-Channel MOSFET Transistor IRFP260 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation @TC=25℃ 280 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL P.

IRFP260M : isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M,IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel.

IRFP260MPBF : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C ID.

IRFP260N : isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260N,IIRFP260N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j.

IRFP260NPBF : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM .

IRFP260NPBF : Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IRFP260NPBF ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM PD Tj Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation @TC=25℃ TC=100℃ Operating Junction Temperature ±20 50 35 200 300 -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHA.

IRFP260PBF : PD- 95915 IRFP260PbF • Lead-Free www.DataSheet4U.com www.irf.com 1 9/27/04 IRFP260PbF www.DataSheet4U.com 2 www.irf.com IRFP260PbF www.DataSheet4U.com www.irf.com 3 IRFP260PbF www.DataSheet4U.com 4 www.irf.com IRFP260PbF www.DataSheet4U.com www.irf.com 5 IRFP260PbF www.DataSheet4U.com 6 www.irf.com IRFP260PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive .




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