SST32HF324C Datasheet

SST32HF324C Multi-Purpose Flash Plus + SRAM ComboMemory

The SST32HF324C ComboMemory devices integrate a CMOS flash memory bank with a CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high-performance SuperFlash technology. Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Progr.

Features

• ComboMemory organized as:
  – 2M x16 Flash + 256K x16 SRAM
• Single 2.7-3.3V Read and Write Operations
• Concurrent Operation
  – Read from or Write to SRAM while Erase/Program Flash
• Superior Reliability
  – Endurance: 100,000 Cycles (typical)
  – Greater than 100 years Data Retention
• Low Power Consumption:
  – Active Current: 15 mA (typical) for Flash or SRAM Read
  – Standby Current: 12 µA (typical)
• Flexible Erase Capability
  – Uniform 2 KWord sectors
  – Uniform 32 KWord size blocks
• Erase-Suspend/Erase-Resume Capabilities
• Security-ID Feature
  – User: 128 bits
• Fast Read Access Times:
  – Flash:.