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15N60


Part Number 15N60
Manufacturer Unisonic Technologies
Title N-CHANNEL POWER MOSFET
Description Preliminary Power MOSFET The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe a...
Features * 15A, 600V, RDS(ON)=0.44Ω @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability „ SYMBOL „ ORDERING INFORMATION Package TO-247 S: Source 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halogen Free 15N60L-T47-T 15N60G-T47-T Note: Pin Assign...

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15N60 : isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 60 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 15N60 isc website:www.iscsemi.cn.

15N60C3 : SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.28 Ω 15 A PG-TO220 Type SPP15N60C3 SPI15N60C3 SPA15N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4600 Q67040-S4601 SP000216325 Marking 15N60C3 15N60C3 15N60C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by T.

15N60DM6 : This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STL15N60DM6 Product summary Order code STL15N60DM6 Marking 15N60DM6 Package PowerFLAT™ 5x6 HV Packing Tape and reel DS13209 - Rev 2 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ra.

15N60HS : SGB15N60HS ^ High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 15A Eoff 200µJ Tj 150°C Marking G15N60HS Package PG-TO-263-3-2 G C E PG-TO-263-3-2 (D²-PAK) (TO-263AB) Type SGB15N60HS Maximum Ratin.

15N65 : The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N65 is universally applied in active power factor correction and high efficient switched mode power supplies.  FEATURES * RDS(ON) 0.65Ω @ VGS=10V, ID=7.5A * High switching speed * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N65L-TA3-T 15N65G-TA3-T 15N65L-TC3-T 15N65G-TC3-T 15N65L.

15N65 : ·Switch regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 45 A PD Total Dissipation @TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 15N65 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forwa.

15N65-MT : The UTC 15N65-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N65-MT is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=7.5A * High Switching Speed 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-262 1 TO-263  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N65L-TF1-T 15N65G-TF1-T 15N65L-TF2-T 15N65G-TF2-T 15N65L-TF3-T 15N6.

15N65C3 : SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC PG-TO220-3-31 Type SPA15N65C3 Package PG-TO220-3-31 Marking 15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) I D,pulse E AS E AR T C=25 °C I D=3 A, V DD=50 V I D=5 A, V DD=50 V Value 15 9.4 45 460 0.8 mJ Unit A Avalanche curren.

15N65K-MT : The UTC 15N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N65K-MT is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) 0.6Ω @ VGS = 10 V, ID = 7.5 A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N65KL-TF2-T 15N65KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 Pin Assignm.




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