GC4902 Datasheet

GC4902 (GC4902 - GC4946) BEAMLEAD PIN DIODES

Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters a.

Features

 Wide Bandwidth / High Switching Speed DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high isolation and ultra high speed switching characteristics.