2N4014 Datasheet

2N4014 Silicon Planar Epitaxial transistor

The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT (300 MHz) and tight c.

Features

(T a mb = 25 °C unless otherwise specified) Symbol I CBO V( BR)CB O Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-Emitter Breakdown Voltage (I B = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Test Conditions V CB = 60 V V CB = 60 V I C = 10 µA T amb = 100 °C 80 Min. Typ. Max. 1.7 120 Unit µA µA V V (B R)CES V (BR)CE O * V (B R)E BO V CE( sat )* I C =10 µA I C = 10 mA I E =10 µA IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC = 10 mA = 100 mA = 300 mA = .