RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.15±0.03 0.2±0.03 Unit: mm • • Two devices are incorporated into a.
ase voltage Collector-emitter voltage RN2967CT to RN2969CT RN2967CT Emitter-base voltage RN2968CT RN2969CT Collector current Collector power dissipation Junction temperature Storage temperature range RN2967CT to RN2969CT IC PC (Note1) Tj Tstg VEBO Symbol VCBO VCEO Rating −20 −20 −6 −7 −15 −50 50 150 −55 to 150 mA mW °C °C 1 2 3 V Q1 Unit V V 6 5 4 Q2 (top view) Note 1: Total rating Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi.
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