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The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superio.
• RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
• Ultra low gate charge (Typ. Qg = 86 nC)
• Low effective output capacitance (Typ. Coss.eff = 361 pF)
• 100% avalanche tested
• RoHS compliant
Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching.
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