STS3401 Datasheet

STS3401 P-Channel Enhancement Mode Field Effect Transistor

Green Product S T S 3401 J un.15 2004 S amHop Microelectronics C orp. P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m Ω ) Max ID -3A R DS (ON) S uper high dense cell design for low R DS (ON ). 75 @ V G S = -10V 100 @ V G S = -4.5V R ugged and reliab.

Features

CRSS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-3A V GS = -4.5V, ID = -2A V DS = -5V, V GS = -10V V DS = -5V, ID = - 3A Min Typ C Max Unit -30 -1 100 -1 -1.5 -2.5 V uA nA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 75 m-ohm 100 m-ohm 6 5 653 130 97 V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 ohm R L = 15 ohm V .