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Ordering number:EN934G NPN Epitaxial Planar Silicon Transistor 2SC3069 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency, general-purpose amplifier., various drivers, muting circuit. Features · High DC current gain (hFE=800 to 3200). · Low collector-to-emi.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(VCE(sat)=0.5V max).
· High VEBO (VEBO≥15V).
Package Dimensions
unit:mm 2003A
[2SC3069]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
C.
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