IRFS4010PbF Datasheet

IRFS4010PbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced.

Features

mally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jkJunction-to-Case iJunction-to-Ambient (PCB Mount) www.irf.com Max. 180 127 720 375 2.5 ± 20 31 -55 to + 175 300 318 See Fig. 14, 15, 22a, 22b, Typ.
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  – Max. 0.40 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 07/07/11 IRFS/SL4010PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Dra.