CNB1304H Datasheet

CNB1304H Reflective photosensor

Reflective Photosensors (Photo Reflectors) CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT ■ Overview CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direct.

Features

• Fast response
• Small size and light weight
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Input (Light Reverse voltage emitting diode) Forward current Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) VR IF PD VCEO 3 50 75 30 V mA mW V Emitter-collector voltage VECO (Base open) 5 V Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Temperature Operating ambient temperature Topr −20 to +85 °C Storage temperature Tstg −30 to +100 °C 8.3±0.3 6.0±0.15 (R2.3) 4.0±0.3 φ2.2±0.3 2-φ1.2±0.15 (4-R0.3) Unit: mm.