Power Transistors 2SC5128 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package with outstanding insula.
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
800 800 500
8 10 5 3 40 2
Junction temperature Storage temperature
Tj 150 Tstg
–55 to +150
Unit V V V V A A.
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