STB6N62K3 Datasheet

STB6N62K3 N-channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitabl.

Features

Order codes STB6N62K3 STD6N62K3 VDSS 620 V RDS(on) max. < 1.2 Ω ID Pw 5.5 A 90 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected Applications
■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, r.